Infineon HEXFET N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin D2PAK-Pin

Bulk discount available

Subtotal 100 units (supplied on a continuous strip)*

PHP3,632.20

(exc. VAT)

PHP4,068.10

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per Unit
100 - 190PHP36.322
200 - 390PHP30.74
400 - 790PHP28.565
800 +PHP26.608

*price indicative

Packaging Options:
RS Stock No.:
831-2809P
Mfr. Part No.:
IRF3205STRLPBF
Manufacturer:
International Rectifier
Find similar products by selecting one or more attributes.
Select all

Brand

International Rectifier

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

110

Maximum Drain Source Voltage Vds

55

Package Type

D2PAK

Series

HEXFET

Mount Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

146

Maximum Gate Source Voltage Vgs

20

Minimum Operating Temperature

-55

Forward Voltage Vf

1.3

Maximum Power Dissipation Pd

200

Maximum Operating Temperature

175

Height

4.83

Standards/Approvals

No

Width

9.65

Length

10.67

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy