HEXFET N-Ch MOSFET 135A 55V D2PAK
- RS Stock No.:
- 831-2792
- Mfr. Part No.:
- IRF2805STRLPBF
- Manufacturer:
- International Rectifier
Subtotal (1 pack of 5 units)*
PHP329.88
(exc. VAT)
PHP369.465
(inc. VAT)
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 95 | PHP65.976 | PHP329.88 |
| 100 - 195 | PHP59.74 | PHP298.70 |
| 200 - 395 | PHP50.604 | PHP253.02 |
| 400 - 795 | PHP46.98 | PHP234.90 |
| 800 + | PHP43.79 | PHP218.95 |
*price indicative
- RS Stock No.:
- 831-2792
- Mfr. Part No.:
- IRF2805STRLPBF
- Manufacturer:
- International Rectifier
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 135 A | |
| Maximum Drain Source Voltage | 55 V | |
| Maximum Drain Source Resistance | 4.7 mΩ | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 200 W | |
| Width | 9.65mm | |
| Height | 4.83mm | |
| Series | HEXFET | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Turn-On Delay Time | 14 ns | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Typical Gate Charge @ Vgs | 150 nC | |
| Typical Input Capacitance @ Vds | 5110 pF @ 25 V | |
| Typical Turn-Off Delay Time | 68 ns | |
| Dimensions | 10.67 x 9.65 x 4.83mm | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Channel Type N | ||
Maximum Continuous Drain Current 135 A | ||
Maximum Drain Source Voltage 55 V | ||
Maximum Drain Source Resistance 4.7 mΩ | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 200 W | ||
Width 9.65mm | ||
Height 4.83mm | ||
Series HEXFET | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Turn-On Delay Time 14 ns | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Typical Gate Charge @ Vgs 150 nC | ||
Typical Input Capacitance @ Vds 5110 pF @ 25 V | ||
Typical Turn-Off Delay Time 68 ns | ||
Dimensions 10.67 x 9.65 x 4.83mm | ||
- COO (Country of Origin):
- CN