Infineon HEXFET N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin DPAK-Pin
- RS Stock No.:
- 830-3394P
- Mfr. Part No.:
- IRLR8743TRPBF
- Manufacturer:
- International Rectifier
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
PHP3,420.00
(exc. VAT)
PHP3,830.00
(inc. VAT)
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Units | Per Unit |
|---|---|
| 100 - 490 | PHP34.20 |
| 500 - 990 | PHP32.00 |
| 1000 - 1990 | PHP29.80 |
| 2000 + | PHP27.80 |
*price indicative
- RS Stock No.:
- 830-3394P
- Mfr. Part No.:
- IRLR8743TRPBF
- Manufacturer:
- International Rectifier
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160 | |
| Maximum Drain Source Voltage Vds | 30 | |
| Series | HEXFET | |
| Package Type | DPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 | |
| Maximum Power Dissipation Pd | 135 | |
| Forward Voltage Vf | 1 | |
| Minimum Operating Temperature | -55 | |
| Typical Gate Charge Qg @ Vgs | 39 | |
| Maximum Operating Temperature | 175 | |
| Standards/Approvals | No | |
| Width | 6.22 | |
| Length | 6.73 | |
| Height | 2.39 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160 | ||
Maximum Drain Source Voltage Vds 30 | ||
Series HEXFET | ||
Package Type DPAK | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 | ||
Maximum Power Dissipation Pd 135 | ||
Forward Voltage Vf 1 | ||
Minimum Operating Temperature -55 | ||
Typical Gate Charge Qg @ Vgs 39 | ||
Maximum Operating Temperature 175 | ||
Standards/Approvals No | ||
Width 6.22 | ||
Length 6.73 | ||
Height 2.39 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
<bold>Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF</bold>
This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliability in power management. Its ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.
<bold>Features & Benefits</bold>
• Offers a maximum drain-source voltage of 30V for dependable operation
• Surface mount capabilities allow for easy integration into circuit designs
• Designed as an enhancement mode transistor to improve switching efficiency
• Handles a maximum continuous drain current of 160A for solid performance
• Low Rds(on) value of 3.9mΩ minimises power losses
• Rated for high operating temperatures up to +175°C for improved thermal management
<bold>Applications</bold>
• High frequency synchronous buck converters in computer power supplies
• Devices requiring low gate threshold voltages for efficient switching
• Various electronic devices that demand a compact power solution
• Isolated DC-DC converters in telecom systems
• Industrial power management and automation systems
<bold>What is the impact of high temperatures on its performance?</bold>
<bold>How does this technology improve efficiency in electronic devices?</bold>
<bold>Can it be used in conjunction with other semiconductors?</bold>
Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.
<bold>What is the significance of its surface mount design?</bold>
The surface mount design supports compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.