Infineon HEXFET N-Channel MOSFET, 99 A, 60 V Enhancement, 3-Pin DPAK-Pin

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Subtotal 100 units (supplied on a continuous strip)*

PHP3,810.00

(exc. VAT)

PHP4,267.00

(inc. VAT)

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Units
Per Unit
100 - 490PHP38.10
500 - 990PHP36.00
1000 - 1990PHP33.80
2000 +PHP31.10

*price indicative

Packaging Options:
RS Stock No.:
830-3372P
Mfr. Part No.:
IRLR3636TRPBF
Manufacturer:
International Rectifier
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Brand

International Rectifier

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

99

Maximum Drain Source Voltage Vds

60

Series

HEXFET

Package Type

DPAK

Mount Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

49

Minimum Operating Temperature

-55

Maximum Gate Source Voltage Vgs

16

Maximum Power Dissipation Pd

143

Forward Voltage Vf

1.3

Maximum Operating Temperature

175

Height

2.39

Standards/Approvals

No

Width

6.22

Length

6.73

Automotive Standard

No

COO (Country of Origin):
CN

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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