Fuji FMW79N60S1HF N-channel MOSFET Transistor, 68 A, 600 V, 3-pin TO-247
- RS Stock No.:
- 772-9010P
- Mfr. Part No.:
- FMW79N60S1HF
- Manufacturer:
- Fuji
This image is representative of the product range
Subtotal 5 units (supplied in a tube)*
PHP6,500.10
(exc. VAT)
PHP7,280.10
(inc. VAT)
Units | Per Unit |
|---|---|
| 5 - 14 | PHP1,300.02 |
| 15 - 29 | PHP1,137.53 |
| 30 - 59 | PHP1,021.46 |
| 60 + | PHP936.33 |
*price indicative
- RS Stock No.:
- 772-9010P
- Mfr. Part No.:
- FMW79N60S1HF
- Manufacturer:
- Fuji
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 600 V | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 545 W | |
| Height | 20.95mm | |
| Series | Super J-MOS | |
| Typical Turn-Off Delay Time | 199 ns | |
| Typical Input Capacitance @ Vds | 7000 pF @ 10 V | |
| Typical Gate Charge @ Vgs | 203 nC @ 10 V | |
| Length | 15.9mm | |
| Dimensions | 15.9 x 5.03 x 20.95mm | |
| Typical Turn-On Delay Time | 107 ns | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 5.03mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Fuji | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 600 V | ||
Maximum Drain Source Resistance 40 mΩ | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 545 W | ||
Height 20.95mm | ||
Series Super J-MOS | ||
Typical Turn-Off Delay Time 199 ns | ||
Typical Input Capacitance @ Vds 7000 pF @ 10 V | ||
Typical Gate Charge @ Vgs 203 nC @ 10 V | ||
Length 15.9mm | ||
Dimensions 15.9 x 5.03 x 20.95mm | ||
Typical Turn-On Delay Time 107 ns | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 5.03mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- JP