MPN

N-Channel MOSFET Transistor, 40 A, 30 V, 8-Pin PQFN Infineon IRFHM830TR2PBF

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Bulk discount available

Subtotal 125 units (supplied on a continuous strip)*

PHP4,686.00

(exc. VAT)

PHP5,248.375

(inc. VAT)

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	International Rectifier
	Channel Type	N
	Maximum Continuous Drain Current	40 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	PQFN
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	37 W
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	3.3mm
	Typical Gate Charge @ Vgs	31 nC @ 10 V
	Length	3.3mm
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand International Rectifier
	Channel Type N
	Maximum Continuous Drain Current 40 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type PQFN
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 37 W
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 3.3mm
	Typical Gate Charge @ Vgs 31 nC @ 10 V
	Length 3.3mm
	Height 1mm
	Minimum Operating Temperature -55 °C

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