MPN

N-Channel MOSFET Transistor, 120 A, 30 V, 8-Pin PQFN Infineon IRFH8318TR2PBF

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Subtotal 125 units (supplied on a continuous strip)*

PHP6,771.50

(exc. VAT)

PHP7,584.125

(inc. VAT)

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	International Rectifier
	Channel Type	N
	Maximum Continuous Drain Current	120 A
	Maximum Drain Source Voltage	30 V
	Package Type	PQFN
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	4.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.35V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	59 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	41 nC @ 10 V
	Length	5.85mm
	Width	5mm
	Height	1.17mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand International Rectifier
	Channel Type N
	Maximum Continuous Drain Current 120 A
	Maximum Drain Source Voltage 30 V
	Package Type PQFN
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 4.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.35V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 59 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 41 nC @ 10 V
	Length 5.85mm
	Width 5mm
	Height 1.17mm
	Minimum Operating Temperature -55 °C

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