Infineon IRLR8726PBF N-channel MOSFET, 86 A, 30 V HEXFET, 3-Pin DPAK
- RS Stock No.:
- 688-7244
- Mfr. Part No.:
- IRLR8726PBF
- Manufacturer:
- International Rectifier
Subtotal (1 pack of 10 units)*
PHP658.53
(exc. VAT)
PHP737.55
(inc. VAT)
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 90 | PHP65.853 | PHP658.53 |
| 100 - 190 | PHP51.459 | PHP514.59 |
| 200 - 490 | PHP34.823 | PHP348.23 |
| 500 - 990 | PHP33.74 | PHP337.40 |
| 1000 + | PHP30.412 | PHP304.12 |
*price indicative
- RS Stock No.:
- 688-7244
- Mfr. Part No.:
- IRLR8726PBF
- Manufacturer:
- International Rectifier
Select all | Attribute | Value |
|---|---|---|
| Brand | International Rectifier | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 86 A | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Gate Source Voltage | ±12 V | |
| Package Type | DPAK | |
| Mounting Type | Surface Mount | |
| Transistor Configuration | Single | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 75 W | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Typical Turn-On Delay Time | 12 ns | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
| Typical Input Capacitance @ Vds | 2150 pF@ 15 V | |
| Typical Turn-Off Delay Time | 15 ns | |
| Height | 2.39mm | |
| Series | HEXFET | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Dimensions | 6.73 x 6.22 x 2.39mm | |
| Select all | ||
|---|---|---|
Brand International Rectifier | ||
Channel Type N | ||
Maximum Continuous Drain Current 86 A | ||
Maximum Drain Source Voltage 30 V | ||
Maximum Drain Source Resistance 6 mΩ | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Gate Source Voltage ±12 V | ||
Package Type DPAK | ||
Mounting Type Surface Mount | ||
Transistor Configuration Single | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 75 W | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Typical Turn-On Delay Time 12 ns | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Typical Input Capacitance @ Vds 2150 pF@ 15 V | ||
Typical Turn-Off Delay Time 15 ns | ||
Height 2.39mm | ||
Series HEXFET | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Dimensions 6.73 x 6.22 x 2.39mm | ||