IXYS IXFN150N15 N-channel MOSFET Transistor & Diode, 150 A, 150 V, 4-pin SOT-227B
- RS Stock No.:
- 194-243P
- Mfr. Part No.:
- IXFN150N15
- Manufacturer:
- IXYS
This image is representative of the product range
Subtotal 5 units (supplied in a tube)*
PHP6,373.65
(exc. VAT)
PHP7,138.50
(inc. VAT)
Units | Per Unit |
|---|---|
| 5 - 19 | PHP1,274.73 |
| 20 - 49 | PHP1,161.20 |
| 50 - 99 | PHP1,078.19 |
| 100 + | PHP1,068.79 |
*price indicative
- RS Stock No.:
- 194-243P
- Mfr. Part No.:
- IXFN150N15
- Manufacturer:
- IXYS
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 150 V | |
| Maximum Drain Source Resistance | 13 mΩ | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Package Type | SOT-227B | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 600 W | |
| Width | 25.07mm | |
| Length | 38.2mm | |
| Number of Elements per Chip | 1 | |
| Typical Turn-On Delay Time | 50 ns | |
| Minimum Operating Temperature | -55 °C | |
| Typical Input Capacitance @ Vds | 9100 pF @ 25 V | |
| Typical Turn-Off Delay Time | 110 ns | |
| Typical Gate Charge @ Vgs | 360 nC @ 10 V | |
| Dimensions | 38.2 x 25.07 x 9.6mm | |
| Height | 9.6mm | |
| Series | HiperFET | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 150 V | ||
Maximum Drain Source Resistance 13 mΩ | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Package Type SOT-227B | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 600 W | ||
Width 25.07mm | ||
Length 38.2mm | ||
Number of Elements per Chip 1 | ||
Typical Turn-On Delay Time 50 ns | ||
Minimum Operating Temperature -55 °C | ||
Typical Input Capacitance @ Vds 9100 pF @ 25 V | ||
Typical Turn-Off Delay Time 110 ns | ||
Typical Gate Charge @ Vgs 360 nC @ 10 V | ||
Dimensions 38.2 x 25.07 x 9.6mm | ||
Height 9.6mm | ||
Series HiperFET | ||
Maximum Operating Temperature +150 °C | ||