IXYS IXFN80N50P N-channel MOSFET Transistor & Diode, 66 A, 500 V, 4-pin SOT-227B
- RS Stock No.:
- 194-029P
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Subtotal 5 units (supplied in a tube)*
PHP5,672.90
(exc. VAT)
PHP6,353.65
(inc. VAT)
Units | Per Unit |
|---|---|
| 5 - 19 | PHP1,134.58 |
| 20 - 49 | PHP1,014.00 |
| 50 - 99 | PHP945.87 |
| 100 + | PHP937.25 |
*price indicative
- RS Stock No.:
- 194-029P
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 66 A | |
| Maximum Drain Source Voltage | 500 V | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Package Type | SOT-227B | |
| Mounting Type | Panel Mount | |
| Pin Count | 4 | |
| Transistor Configuration | Single | |
| Channel Mode | Enhancement | |
| Category | Power MOSFET | |
| Maximum Power Dissipation | 700 W | |
| Typical Turn-On Delay Time | 25 ns | |
| Minimum Operating Temperature | -55 °C | |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V | |
| Typical Input Capacitance @ Vds | 12700 pF@ 25 V | |
| Typical Turn-Off Delay Time | 70 ns | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 9.6mm | |
| Series | HiperFET, Polar | |
| Maximum Operating Temperature | +150 °C | |
| Width | 25.07mm | |
| Length | 38.2mm | |
| Dimensions | 38.2 x 25.07 x 9.6mm | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 66 A | ||
Maximum Drain Source Voltage 500 V | ||
Maximum Drain Source Resistance 65 mΩ | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Package Type SOT-227B | ||
Mounting Type Panel Mount | ||
Pin Count 4 | ||
Transistor Configuration Single | ||
Channel Mode Enhancement | ||
Category Power MOSFET | ||
Maximum Power Dissipation 700 W | ||
Typical Turn-On Delay Time 25 ns | ||
Minimum Operating Temperature -55 °C | ||
Typical Gate Charge @ Vgs 195 nC @ 10 V | ||
Typical Input Capacitance @ Vds 12700 pF@ 25 V | ||
Typical Turn-Off Delay Time 70 ns | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 9.6mm | ||
Series HiperFET, Polar | ||
Maximum Operating Temperature +150 °C | ||
Width 25.07mm | ||
Length 38.2mm | ||
Dimensions 38.2 x 25.07 x 9.6mm | ||